Conduction-band spin splitting and negative magnetoresistance inA3B5heterostructures
نویسندگان
چکیده
منابع مشابه
Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS2, MoSe2, WS2, and WSe2 due to the combination of spin-orbit coupling and lack of inversion symmetry. Two types of calculation are done. First, density functional theory (DFT) calculations based on plane waves that yield large splittings, between 3 and 30 meV. Sec...
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We use a recently developed self-consistent GW approximation to present systematic ab initio calculations of the conduction band spin splitting in III-V and II-VI zinc blende semiconductors. The spin-orbit interaction is taken into account as a perturbation to the scalar relativistic Hamiltonian. These are the first calculations of conduction band spin splittings based on a quasiparticle approa...
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-We present the first successful optically detected magnetic resonance experiments (ODMR) on strained and unstrained Ga~In~ _,As/InP type-I quantum wells. The resonances attributed to electrons are in general anisotropic and detailed results are given for the composition range 0.4 < x < 0.6. Extrapolating to the binary end points, i.e. lnAs and GaAs close agreement with existing results is foun...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1995
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.51.16928